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1 compound semiconductor
напівпровідникова сполука, складний напівпровідникEnglish-Ukrainian dictionary of microelectronics > compound semiconductor
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2 compound semiconductor material
матеріал на основі напівпровідникової сполукиEnglish-Ukrainian dictionary of microelectronics > compound semiconductor material
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3 compound semiconductor substrate
підкладка з напівпровідникової сполукиEnglish-Ukrainian dictionary of microelectronics > compound semiconductor substrate
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4 compound-semiconductor body
підкладка з напівпровідникового сплаву (сполуки)English-Ukrainian dictionary of microelectronics > compound-semiconductor body
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5 compound-semiconductor device
прилад на основі напівпровідникової сполукиEnglish-Ukrainian dictionary of microelectronics > compound-semiconductor device
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6 compound-semiconductor interface
межа розділу між напівпровідниковими з’єднаннямиEnglish-Ukrainian dictionary of microelectronics > compound-semiconductor interface
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7 group III-V compound semiconductor material
напівпровідникова сполука типу AIIIBVEnglish-Ukrainian dictionary of microelectronics > group III-V compound semiconductor material
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8 II-VI compound semiconductor
напівпровідникова сполука типу AIIBVIEnglish-Ukrainian dictionary of microelectronics > II-VI compound semiconductor
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9 semiconductor
1) напівпровідник 2) напівпровідниковий прилад - amorphous semiconductor
- bare semiconductor
- boron semiconductor
- broad-area semiconductor
- bulk semiconductor
- compensated semiconductor
- compound semiconductor
- cubic semiconductor
- degenerate semiconductor
- direct-gap semiconductor
- discrete semiconductor
- donor-type semiconductor
- double-heterojunction semiconductor
- electronic semiconductor
- elemental semiconductor
- extrinsic semiconductor
- fused semiconductor
- graded-gap semiconductor
- group III-V semiconductor
- high-mobility semiconductor
- high-ohmic semiconductor
- hole semiconductor
- impurity semiconductor
- indirect-gap semiconductor
- intrinsic semiconductor
- large-gap semiconductor
- leadless semiconductor
- low-bandgap semiconductor
- low-mobility semiconductor
- low-ohmic semiconductor
- low-resistance semiconductor
- microwave semiconductor
- narrow-bandgap semiconductor
- neutron transmutation doped semiconductor
- neutron doped semiconductor
- nondegenerate semiconductor
- n-type semiconductor
- optoelectronic semiconductor
- organo-metallic semiconductor
- power semiconductor
- p-type semiconductor
- resin-mold semiconductor
- small-gap semiconductor
- stoichiometric semiconductor
- substrate semiconductor
- synthetic semiconductor
- two-valley semiconductor
- wide-bandgap semiconductor
- zink-blende semiconductor
- II-VI compound semiconductorEnglish-Ukrainian dictionary of microelectronics > semiconductor
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10 compound
1. ім.1) (хімічна) сполука; суміш2) компаунд2. дієсл. змішувати; (хімічно) сполучати - bismuth-based compound
- bulk-molding compound
- element compound
- heat-sink compound
- hygroscopic compound
- lapping compound
- LSCO compound
- metal heterocyclic compound
- organometallic compound
- potting compound
- pseudobinary compound
- pseudoternary compound
- sealing compound
- semiconducting compound
- semiconductor compound
- thermosetting compound
- wide-gap compound
- III-V compound
- 1-2-3 compound -
11 semiconductor compound
напівпровідникова сполукаEnglish-Ukrainian dictionary of microelectronics > semiconductor compound
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12 binary semiconductor compound
бінарний напівпровідник, бінарна напівпровідникова сполукаEnglish-Ukrainian dictionary of microelectronics > binary semiconductor compound
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13 material
матеріал - acceptor material
- adulterated semiconductor material
- base material
- binding material
- brittle material
- bubble material
- carrier material
- cermet material
- coarse-featured resist material
- composite material
- compound semiconductor material
- conductivity-type imparting material
- contact material
- contrast enhancing material
- dopant masking material
- doped material
- doping material
- electronic material
- electron resist material
- encapsulating material
- encapsulation material
- epitaxial material
- etchant masking material
- etching material
- evaporated material
- evaporation material
- filler material
- film material
- fine-featured resist material
- foreign material
- fragile material
- group III-V compound semiconductor material
- heavily doped material
- high-resistivity material
- host material
- impurity material
- laminated material
- liquid-crystal material
- lowly doped material
- low-resistivity material
- LSCO material
- magnetostrictive material
- mask-forming material
- mask material
- mismatched materials
- molding material
- multilayer material
- negative-image material
- organosilicone material
- packaging material
- parent material
- patterned material
- photoresist material
- photoresponsive material
- photosensitive material
- piezoelectric material
- plastic material
- polycrystalline material
- positive-image material
- refractory material
- resist material
- resistive material
- semiconductive material
- semiconductor material
- semiconductor-glass composite material
- silicon-on-insulator material
- silicon-on-sapphire material
- Si-MBE material
- single-crystal material
- spinel material
- starting material
- stop-etch material
- substrate material
- superconducting material
- support material
- thallium-based material
- thixotropic material
- virgin material
- Y–Ba–Cu–O material
- Y1–Ba2–Cu3–O7-x material
- 1-2-3 material -
14 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device -
15 interface
1 ім.1) межа розділу; поверхня розділу2) пристрій сполучення, інтерфейс; погоджуючий пристрій2. дієсл. сполучати; погоджувати - cassette-to-cassette interface
- compound-semiconductor interface
- defect-free interface
- deposit-substrate interface
- dielectric-semiconductor interface
- heterojunction interface
- junction interface
- magnetic tape interface
- man-machine interface
- network interface
- packet bus management interface
- p-n junction interface
- Schottky interface
- semiconductor interface
- silicon-silicon dioxide interface
- solid-liquid interface
- standard mechanical interfaceEnglish-Ukrainian dictionary of microelectronics > interface
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16 body
1) підкладка 2) тіло кристала - compound-semiconductor body
- epitaxial body
- intrinsic body
- package body
- resistor body
- unitary body -
17 substrate
підкладка; основа - amorphous insulating substrate
- blank substrate
- bulk substrate
- composite substrate
- compound semiconductor substrate
- dislocation-free substrate
- foreign substrate
- garnet substrate
- glass-сеramic substrate
- glazed substrate
- high-resistivity substrate
- implanted substrate
- insulative substrate
- interconnection substrate
- ion-milled substrate
- low-resistivity substrate
- mask substrate
- MP substrate
- multilayer substrate
- multilayer printed substrate
- n-typesubstrate
- nsubstrate
- passive substrate
- porcelainized steel substrate
- porous polishing substrate
- preloaded substrate
- prescreened substrate
- pretinned substrate
- printed-wiring substrate
- p-type substrate
- silicon through-hole substrate
- SOI substrate
- SOS substrate
- stepless substrate
- thick-film multilevel substrate
- thick-film screened substrate
- thin-film substrate
- V-grooved silicon substrate
- V-grooved substrate
- wiring substrateEnglish-Ukrainian dictionary of microelectronics > substrate
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18 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET -
19 film
1) плівка; тонкий шар 2) фотоплівка; кіноплівка - boundary film
- chemical vapor deposition film
- compound film
- contaminant-free film
- electrodeposited film
- epitaxial film
- epitaxially grown film
- exposed film
- field-охide film
- gate insulating film
- hardened film
- heteroepitaxial film
- interfacial layer film
- kapton film
- KPR film
- laminate film
- Langmuir-Blodgett LB film
- Langmuir-Blodgett film
- magnetic-bubble film
- maskingfilm
- maskfilm
- metal-insulator-metal film
- monomolecular film
- mylar film
- oxidation-barrier film
- oxynitride film
- patterned film
- plasma-laser deposition PLD film
- plasma-laser deposition film
- polyimide film
- polymer thick film
- release film
- resist film
- resistive film
- semiconductor-on-insulator thin film
- shield ing film
- shield film
- single-crystal film
- solid photoresist film
- sputtered film
- substrate film
- superlattice Langmuir–Blodgett films
- thermally grown film
- thick films
- thin films
- transparent film
- vacuum-deposited film
- wiring multilayer film
См. также в других словарях:
Compound semiconductor — A compound semiconductor is a semiconductor compound composed of elements from two or more different groups of the periodic table [1]. These semiconductors typically form in groups 13 16 (old groups III VI), for example of elements from group 13… … Wikipedia
compound semiconductor — sudėtinis puslaidininkis statusas T sritis automatika atitikmenys: angl. compound semiconductor vok. Verbindhalbleiter, m; Verbindungshalbleiter, m; zusammengesetzter Halbleiter, m rus. сложный полупроводник, m pranc. semi conducteur composé, m … Automatikos terminų žodynas
compound semiconductor — sudėtinis puslaidininkis statusas T sritis fizika atitikmenys: angl. compound semiconductor vok. Verbindhalbleiter, m; Verbindungshalbleiter, m; zusammengesetzter Halbleiter, m rus. сложный полупроводник, m pranc. semi conducteur composé, m … Fizikos terminų žodynas
compound-semiconductor interface — skiriamasis puslaidininkinių junginių paviršius statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor interface vok. Grenzfläche zwischen den Verbindungshalbleitern, f rus. поверхность раздела между полупроводниковыми… … Radioelektronikos terminų žodynas
compound-semiconductor device — sudėtinio puslaidininkio įtaisas statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor device vok. Verbindungshalbleiterbaustein, m rus. прибор на основе полупроводникового соединения, m pranc. dispositif à la base de semi… … Radioelektronikos terminų žodynas
compound-semiconductor body — sudėtinio puslaidininkio padėklas statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor body vok. Verbindungshalbleitersubstrat, n rus. подложка из полупроводникового соединения, f pranc. substrat en semi conducteur composé … Radioelektronikos terminų žodynas
AlIIIBlV compound semiconductor — Al{III}Bl{V} puslaidininkis statusas T sritis radioelektronika atitikmenys: angl. Al{III}Bl{V} compound semiconductor vok. Al{III}Bl{V} Halbleiter, m rus. полупроводник типа Al{III}Bl{V}, m pranc. semi conducteur type Al{III}Bl{V}, m … Radioelektronikos terminų žodynas
group AlIIIBlV compound semiconductor material — puslaidininkinis Al{III}Bl{V} junginys statusas T sritis radioelektronika atitikmenys: angl. group Al{III}Bl{V} compound semiconductor material vok. Al{III}Bl{V} Verbindung, f rus. полупроводниковое соединение типа Al{III}Bl{V}, n pranc. composé… … Radioelektronikos terminų žodynas
AlIIBlVI compound semiconductor — Al{II}Bl{VI} puslaidininkis statusas T sritis radioelektronika atitikmenys: angl. Al{II}Bl{VI} compound semiconductor vok. Al{II}Bl{VI} Halbleiter, m; Al{II}Bl{VI} Verbindung, f rus. полупроводниковое соединение типа Al{II}Bl{VI}, n pranc. semi… … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia